Fujitsu Limited and Fujitsu Microelectronics Europe GmbH (FME) have announced two new Mobile FCRAM devices based on the company’s Fast Cycle (RAM) architecture. The new Mobile FCRAMs, “MB82DBS02163C” and(FCRAM “MB82DBS04163B”, are the first to adopt Burst Mode for both the Read and Write operations, with compliance to “Common Specification for Mobile RAM (COSMORAM)”, as recently announced by Fujitsu Limited, NEC Electronics Corporation and Toshiba Corporation.
The new devices, designed for use in 3rd generation mobile phones, offer such facilities as built-in digital camera, video data streaming and other multimedia services to satisfy the growing memory requirements of advanced infrastructure and high data rates demanded by mobile cellular technologies.
They adopt Burst Mode operation, compatible to Burst Read operation of Flash memory of which consecutive Read operations are synchronised to system clock. In addition to Burst Read operation, FCRAMs realise Burst Write operation. The Burst Mode of FCRAMs provides enhanced performance compared with Page Mode devices. The devices are initially operational in Page Mode after power on and are user configurable to Burst Mode. Therefore, these devices retain functionality inherent in today’s design infrastructure. Over and above the improvement on Read and Write access, power consumption is also improved. User configurable Partial Power Down Mode is available, which allows users to optimise design for longer battery life.
These new devices will be available in monolithic and multi-chip packages together with Fujitsu Flash memory, or in wafer form for embedded
applications. Future versions will expand Burst frequency up to 100MHz as well as densities up to 128Mbit. This announcement underlines Fujitsu’s commitment to the continued development and production of high value-added Application-Specific Memory products, in response to customer requirements
